Weebit Nano Limited
Corporate Overview
Weebit Nano is a prominent developer of advanced semiconductor memory technology with a focus on delivering a leap forward in storage and computing capabilities to drive the proliferation of intelligent devices. The company was incorporated in 2015 and has since then been dedicated to creating non-volatile memory (NVM) technology that is designed to be the successor to flash memory.
WBT’s ground-breaking Resistive Random Access Memory (ReRAM or RRAM) technology delivers a combination of high performance, low power, and low cost that is unmatched by other NVMs. This technology allows global semiconductor companies and foundries to easily and cost-effectively differentiate their products.
The Company is committed to creating intelligent devices that have the potential to address some of the world’s biggest challenges. From tiny IoT sensors to advanced AI and cloud computing, these devices have the power to transform the world as we know it. The company’s team of experts is harnessing their deep expertise and passion for innovation to create NVM technology that will revolutionize the industry.
The company’s focus is on delivering the industry’s most advanced memory technologies has put it at the forefront of the industry. Weebit Nano’s ReRAM technology has been recognized as a game-changer in the industry, with its high performance, low power, and low cost attributes making it the most preferred NVM technology.
The company has a strong financial position. The company’s financials show impressive revenue growth and profitability, with a positive outlook for the future.
Weebit Nano LTD (WBT) is committed to advancing the frontiers of ReRAM technology by fostering a culture of innovation, creativity, and excellence. The company is dedicated to delivering exceptional products and services that exceed customer and partner expectations. WBT prioritizes transparency, honesty, and integrity in all interactions, building trust and confidence with all stakeholders. The company promotes a diverse and inclusive workplace where every employee is empowered to contribute to the company’s success and the broader community.
Weebit Nano LTD (WBT) envisions revolutionizing the technology industry by creating innovative and sustainable solutions that empower customers and partners worldwide. The company strives to become a global leader in ReRAM technology, providing unmatched quality, transparency, and integrity in all areas of operation. WBT aims to promote a culture of diversity and inclusion, ensuring that all employees feel valued, respected, and inspired to bring their best selves to work.
Key Personnel
Coby Hanoch
Chief Executive Officer
Ishai Naveh
Chief Technical Officer
Ilan Sever
Vice President of Research and Development
Eran Briman
Vice President of Marketing & Business Development
Alla Felder
Chief Financial Officer
Amir Regev
Vice President of Technical Development
Key Products
Weebit ReRAM (Resistive Random-Access Memory) addresses the growing need for higher-performance, more reliable, lower-power, and more cost-effective non-volatile memory (NVM) solutions in a broad range of electronic products.
How Weebit ReRAM Works
Immediately after it is manufactured, the memory cell is in a highly resistive state, meaning it will not allow current to flow between electrodes at standard voltage levels. At this point, the metal oxide layer is insulated against electric current. A one-time ‘forming’ step is required to make it possible for the memory cell to be used. In the forming step, a positive voltage is applied on the switching layer through its electrodes, creating the filament and changing the resistance of the oxide layer to a Low Resistive State (LRS).
The level remains intact – maintaining the data – until the cell is purposefully reset by applying a negative voltage to break the filament, thus migrating to a High Resistive State (HRS).
Applying positive and negative voltages can cause the cell to switch from one state to the other, encoding binary information by creating either a 1 (LRS) or a 0 (HRS) data bit stored in the memory cell. Once formed, the conductive filament can be broken, then reformed and broken again during successive cycles of erasing and programming the memory cell.
Weebit ReRAM technology is available to customers in the form of a memory module, which is a critical component when embedding a memory array in a System-on-Chip (SoC). A memory module acts as the interface between the memory array and the rest of the system and includes the logic that controls the way the array is accessed.
WBT implements ReRAM (RRAM) modules in an intelligent way, with unique patent-pending analog and digital smart circuitry that significantly enhances the array’s technical parameters including speed, retention, and endurance.
An efficient ReRAM module must be designed and developed in close relation with the memory bitcell so it can optimize the functionality of the memory array. Due to the inherent variability of ReRAM (RRAM) cells, specially developed algorithms are key to the process of programming and erasing cells. These algorithms must be delicately balanced between programming time (the quicker, the better), current (the lower, the better), and cell endurance (allowing each individual cell to operate for as many program/erase [P/E] cycles as possible). Voltage levels, P/E pulse widths and the number of such pulses must be optimized to work with a given bitcell technology.
When reading any given bit, the data must be verified against other assistive information to make sure there are no read errors that could impair overall system performance.
Voltage and current levels must be carefully examined throughout the memory module for any operation – including read, program and erase – to keep power consumption to a minimum and ensure the robustness and reliability of the memory array.
Milestones
NOV 2021 – Raised further A$35m; well funded to 2024
JUN 2022 – ReRAM IP module fully functional, live demonstration
OCT 2022 – ReRAM selector can achieve high densities needed for discrete & embedded applications
OCT 2022 – Final qualification of ReRAM IP module. Industrial-grade temperatures
NOV 2022 – First productionfab wafers integrating Weebit IP
JAN 2023 – Taped out first demo chip in advanced 22nm FD-SOI process
Successfully completed ReRAM memory module qualification 13 Qualification is a key step for every semiconductor product on each new target process
Based on results, Weebit ReRAM is being evaluated by several Tier-1 fabs and customers Weebit and CEA-Leti are now qualifying ReRAM module at higher temperatures and endurance levels – for advanced applications
Key Targets for 1H23
- SkyWater – Conclude qualification of embedded ReRAM
- Fab Partners – Sign with a Tier-1 fab
- Customers – Close initial agreements
- Automotive – Qualify the technology for automotive conditions
- Continue R&D – Further technical enhancements to the ReRAM cell and selector technologies
- Scaling 22nm – Continue scaling the technology
